ANALYZING METHOD OF METALLIC CONTAMINATION ON SURFACE OF SILICON WAFER

ANALYZING METHOD OF METALLIC CONTAMINATION ON SURFACE OF SILICON WAFER

PROBLEM TO BE SOLVED: To improve accuracy in analysis of metallic contamination, like platinum on a surface of a silicon wafer. SOLUTION: A surface of a wafer 1 is dipped in a diluted aqua regia 3 made of aqua regia diluted in pure water for a given time, and the diluted aqua regia 3 is recollected....

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Bibliographische Detailangaben
1. Verfasser: OGURO SHIZUO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To improve accuracy in analysis of metallic contamination, like platinum on a surface of a silicon wafer. SOLUTION: A surface of a wafer 1 is dipped in a diluted aqua regia 3 made of aqua regia diluted in pure water for a given time, and the diluted aqua regia 3 is recollected. The aqua regia 3 is vaporized to dried, solidified, and resolved in a nitric acid. Then, the metallic contamination on the surface of the silicon wafer 1 is analyzed by inductively coupled plasma mass spectrometry (ICP-MS) or atom absorption spectrometry(AAS).