FORMATION OF LAYER INSULATION FILM OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To prevent generation of metal residue by forming a P-TEOS film having a large amount charges in a film in a lower layer of a interlaminar film of a semiconductor device and thickening an O3-TEOS film of an upper layer. SOLUTION: A metal wiring 102 is formed using such as tungs...

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Bibliographische Detailangaben
1. Verfasser:	TERADA NOBUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent generation of metal residue by forming a P-TEOS film having a large amount charges in a film in a lower layer of a interlaminar film of a semiconductor device and thickening an O3-TEOS film of an upper layer. SOLUTION: A metal wiring 102 is formed using such as tungsten, aluminum, etc., on a semiconductor substrate 101 1 and then a P-TEOS (tetraethyl orthosilicate) film 103 of good coverage having a large amount charges in a film is formed. Then, an O3-TEOS film 104 which is excellent in self-flatness for thickening is formed thereon. The amount charges in the P-TEOS film 103 used for a lower layer film is about -1 to 2×10" q/cm2. As a result, evenness as a layer insulation film becomes good and metal residue is hard to generate during formation of a wiring of an upper layer.