DIELECTRIC CIRCUIT SUBSTRATE AND MM-WAVE SEMICONDUCTOR DEVICE INCLUDING THE SAME

PROBLEM TO BE SOLVED: To obtain a dielectric circuit substrate, where high-frequency characteristics are not affected by the amplification and propagation of resonance when a mm-wave semiconductor device is composed, and the mm-wave semiconductor device. SOLUTION: In the dielectric circuit substrate...

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Bibliographische Detailangaben
1. Verfasser: KAKIMOTO NORIKO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a dielectric circuit substrate, where high-frequency characteristics are not affected by the amplification and propagation of resonance when a mm-wave semiconductor device is composed, and the mm-wave semiconductor device. SOLUTION: In the dielectric circuit substrate, via holes 6 for shielding electromagnetic waves are arranged so that they are not in a straight line at each side or are arranged at an unequal interval, thus allowing a resonance frequency to differ for each part and suppressing the amplification and propagation of resonance. Also, a distance L1 between the via holes 6 arranged mutually adjacent is preferably set to less than half the effective wavelength, thus reinforcing electromagnetic shielding.