COMPOSITION FOR POLISHING COMPOUND SEMICONDUCTOR WAFER AND POLISHING METHOD FOR COMPOUND SEMICONDUCTOR USING THE SAME

PROBLEM TO BE SOLVED: To provide a polishing composition for mirror finishing the surface of a compound semiconductor wafer which is not adverse to a work environment, with less environmental contamination, and which is excellent in stability and durability for polishing. SOLUTION: A peroxide or per...

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Bibliographische Detailangaben
Hauptverfasser:	TANAKA HIROAKI, TANIWAKI TSUKASA, INOUE HIROAKI
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a polishing composition for mirror finishing the surface of a compound semiconductor wafer which is not adverse to a work environment, with less environmental contamination, and which is excellent in stability and durability for polishing. SOLUTION: A peroxide or peroxoacid compound, and water-soluble amine are contained with pH at 7.0-10.5, its peroxide value is 3-1500 millimol, and the content of water-soluble amine is 0.01-0.5 mol/kg. The water-soluble amine is preferred to contain at least one alcohol hydroxyl group in its structure, with triethanol amine especially preferred.