SEMICONDUCTOR MANUFACTURING DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve evenness in film thickness of a wafer surface without using a special wafer support jig. SOLUTION: The gas flow speed v(r) in Z-axis direction is increases by increasing a gas flow rate or reducing an interval a-b between a wafer 3 and an inner tube 2. The v(r) has a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	UDO TSUTOMU, FUTASE TAKUYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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