SEMICONDUCTOR MANUFACTURING DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve evenness in film thickness of a wafer surface without using a special wafer support jig. SOLUTION: The gas flow speed v(r) in Z-axis direction is increases by increasing a gas flow rate or reducing an interval a-b between a wafer 3 and an inner tube 2. The v(r) has a speed gradient in r-direction, causing a pressure difference in the r-direction based on Bernoulli's theorem. The pressure difference moves a reactive gas in the r-direction, causing a concentration gradient by -dC/dR in the r-direction. The reactive gas sticking to the peripheral part of the wafer 3 before deposition is moved in the r-direction to decrease the gas concentration at the peripheral part of decreasing deposition film thickness at the wafer's peripheral part and improving the evenness in film thickness. Related to the gas flow rate, a pressure difference ΔP in z-direction is 1Pa/mol or above, while 4Pa/mol or above is preferred. The interval a-b is 40 mm or less while 20 mm or less is preferred.