INTEGRATED CIRCUIT INCLUDING RESISTOR HAVING SMALL TEMPERATURE COEFFICIENT OF RESISTANCE

PROBLEM TO BE SOLVED: To make a resistor insensitive to temperature variation by an arrangement wherein a polysilicon layer has a high dopant concentration and an implantation damage substantially not annealed. SOLUTION: A resistor is formed by using nonselective heavy ion BF2 implantation for doping a polysilicon layer. In a quick annealing stage of 900 deg.C, implantation into the resistor is activated and final doping shape is set for a bipolar device 200 and an MOS device 100. BF2 of high dose causes significant damage of polysilicon film and the damage is not annealed by short thermal annealing at a relatively low temperature (900 deg.C) in order to activate implantation. Damage of implantation forms an additional lapping site for carriers and increases resistance at a high implantation dose.