SURFACE FLATTENING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of repairing a surface recess produced on the metal part of a semiconductor device by a dishing phenomenon when a CMP (chemical mechanical polishing) process is carried out so as to uniformly flatten all the surface of the semiconductor device. SOLUTION: The surface of a base material 10 is made to keep undergoing a primary chemical mechanical polishing process until a point of time when a dishing phenomenon occurs in the polished surface of a metal part 22. Furthermore, another metal 24 is deposited on the surface of the metal part 22 by preferably electroless copper plating so as to fill up a surface recess caused by a dishing phenomenon with the other metal 24, and then the surface of the base material 10 is subjected to a secondary chemical mechanical polishing process.