PLASMA PROCESSING DEVICE

PROBLEM TO BE SOLVED: To reduce particles in amount and also enable plasma to be uniformly introduced to a work. SOLUTION: A pair of an upper and a lower electrode, 118 and 106, are arranged in the processing chamber 102 of an etching device 100. The peripheral edge of the upper electrode 118 is cov...

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Bibliographische Detailangaben
1. Verfasser:	OYABU ATSUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce particles in amount and also enable plasma to be uniformly introduced to a work. SOLUTION: A pair of an upper and a lower electrode, 118 and 106, are arranged in the processing chamber 102 of an etching device 100. The peripheral edge of the upper electrode 118 is covered with a first ring-shaped body 122, and a cylinder 124 is provided around the ring-shaped body 122. A second ring- shaped body 116 is provided around the lower electrode 106. When the lower electrode 106 is arranged at a processing position, the second ring-shaped body 16 is positioned inside the cylinder 124, and a plasma space 102a is formed. An exhaust path 142 is formed between the cylinder 124 and the second ring- shaped body 116. A space between the cylinder 124 and the second ring-shaped body 116 is so set as to enable the exhaust path 142 to get higher in gas conductance than the plasma space 102a. The cylinder 124 and the ring-shaped bodies 122 and 116 are heated by plasma.