HALFTONE PHASE SHIFT PHOTOMASK, BLANKS FOR SAME AND PATTERN FORMING METHOD FOR USING SAME
PROBLEM TO BE SOLVED: To obtain a halftone phase shift photomask whose transmittance and phase angle do not vary even if the photomask is irradiated with excimer laser light used for exposure over a long time. SOLUTION: The halftone phase shift photomask 108 has a pattern of a halftone phase shift f...
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| creator | NAKAZAWA HIROSUKE ONODERA TOSHIO MORI HIROSHI HATSUDA CHIAKI ITO NORITO MATSUO TAKAHIRO HAYASHI NAOYA MOTONAGA TOSHIAKI OGAWA TORU |
| description | PROBLEM TO BE SOLVED: To obtain a halftone phase shift photomask whose transmittance and phase angle do not vary even if the photomask is irradiated with excimer laser light used for exposure over a long time. SOLUTION: The halftone phase shift photomask 108 has a pattern of a halftone phase shift film 102 containing at least chromium and fluorine on a transparent substrate 101. The pattern is formed by patterning the halftone phase shift film 102 after irradiation with light 109 of a wavelength that is substantially absorbed in the film 102 and the variation of optical characteristics in irradiation with excimer laser light for exposure is suppressed. |
| format | Patent |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | HALFTONE PHASE SHIFT PHOTOMASK, BLANKS FOR SAME AND PATTERN FORMING METHOD FOR USING SAME |
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