HALFTONE PHASE SHIFT PHOTOMASK, BLANKS FOR SAME AND PATTERN FORMING METHOD FOR USING SAME

HALFTONE PHASE SHIFT PHOTOMASK, BLANKS FOR SAME AND PATTERN FORMING METHOD FOR USING SAME

PROBLEM TO BE SOLVED: To obtain a halftone phase shift photomask whose transmittance and phase angle do not vary even if the photomask is irradiated with excimer laser light used for exposure over a long time. SOLUTION: The halftone phase shift photomask 108 has a pattern of a halftone phase shift f...

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Bibliographische Detailangaben
Hauptverfasser: NAKAZAWA HIROSUKE, ONODERA TOSHIO, MORI HIROSHI, HATSUDA CHIAKI, ITO NORITO, MATSUO TAKAHIRO, HAYASHI NAOYA, MOTONAGA TOSHIAKI, OGAWA TORU
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a halftone phase shift photomask whose transmittance and phase angle do not vary even if the photomask is irradiated with excimer laser light used for exposure over a long time. SOLUTION: The halftone phase shift photomask 108 has a pattern of a halftone phase shift film 102 containing at least chromium and fluorine on a transparent substrate 101. The pattern is formed by patterning the halftone phase shift film 102 after irradiation with light 109 of a wavelength that is substantially absorbed in the film 102 and the variation of optical characteristics in irradiation with excimer laser light for exposure is suppressed.