INSPECTION OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To certainly and efficiently discover the crack generated in the insulating film on the surface of a semiconductor device. SOLUTION: In a method for inspecting the presence of the crack in the insulating film 3 of a semiconductor device having the insulating film 3 applied to t...

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Bibliographische Detailangaben
1. Verfasser:	SHINOHARA MAMORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DIAGNOSIS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HUMAN NECESSITIES HYGIENE IDENTIFICATION INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS MEDICAL OR VETERINARY SCIENCE PHYSICS SEMICONDUCTOR DEVICES SURGERY TESTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To certainly and efficiently discover the crack generated in the insulating film on the surface of a semiconductor device. SOLUTION: In a method for inspecting the presence of the crack in the insulating film 3 of a semiconductor device having the insulating film 3 applied to the surface thereof and having a conductive film 2 formed thereto under the insulating film 3, a conductive soln. 8 is brought into contact with the insulating film 3 and an electrode 81 is brought into contact with the conductive soln. 80 and the electric signal transmitted to the electrode 81 such as the current flowing across the electrode 81 and the conductive film 2 through the conductive soln. 80 is detected.