METHOD FOR SHAPING COMPOUND SEMICONDUCTOR WAFER EDGE

PROBLEM TO BE SOLVED: To provide a polishing composite that is superior in stability and durability of polishing power and does not harm working environment in a method for mirror polishing the edge of a compound semiconductor wafer. SOLUTION: The edge of a compound semiconductor wafer is mirror-pol...

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Bibliographische Detailangaben
Hauptverfasser:	TANAKA HIROAKI, TANIWAKI TSUKASA, INOUE HIROAKI
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a polishing composite that is superior in stability and durability of polishing power and does not harm working environment in a method for mirror polishing the edge of a compound semiconductor wafer. SOLUTION: The edge of a compound semiconductor wafer is mirror-polished by pressing the edge part of a compound semiconductor wafer to a drum of a polishing machine, having a drum with a polishing pad adhered on its surface, and rotating both the compound semiconductor wafer and the drum, while supplying a polishing composite. In this case, the polishing composite contains a peroxide compound or a peroxoacid compound, a water-soluble amine, and colloidal silicon-oxide particles, and yields a pH value in the range of 7.0-0.5.