CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF

CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To provide a capacitor of a semiconductor device which generates little leakage current and provides a high capacity. SOLUTION: A lower electrode 40 is formed on a semiconductor substrate 30, and a TaON film 43 as a dielectric film is evaporated in a LPCVD chamber. Then, the su...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KI KISEI, YANA KOUZEN, KAN ITSUKON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a capacitor of a semiconductor device which generates little leakage current and provides a high capacity. SOLUTION: A lower electrode 40 is formed on a semiconductor substrate 30, and a TaON film 43 as a dielectric film is evaporated in a LPCVD chamber. Then, the surface is nitrided by a rapid heat treatment at 600-900 deg.C in a N2O or N2 atmosphere to form a TaON film 43a having satisfactory quality and high permittivity. On the TaON film 43a, an upper electrode 44 is formed to complete a capacitor of a high capacity.