FLASH MEMORY ELEMENT AND MANUFACTURE OF THE SAME AND DELETING METHOD

PROBLEM TO BE SOLVED: To realize a flash memory element for realizing sector deletion and bit deletion, and for improving the reliability of an element by preventing the decrease of the operating speed of the element, and a method for manufacturing this flash memory element, and a method for deleting it. SOLUTION: This flash memory element is provided with a semiconductor substrate, an element separating film for separating an active region and a field region in a selection region on the semiconductor substrate, word lines 30 formed so that they can vertically cross the element separating film, and drain regions 107 and 108 formed by an impurity ion implanting process by using the word lines 30 as a mask, drain lines 40 formed at the upper part of the drain region 108 between the word lines 30, and source lines 60 formed so that they can vertically cross the word lines 30 on the active region separated by the element separating film.