THIN-FILM PROCESSING METHOD AND LIQUID-CRYSTAL DISPLAY

PROBLEM TO BE SOLVED: To improve purity of a sample by eliminating the constraint on the pressure of gas for processing a sample, while promoting chemical reaction by generation of low molecular weight active species through gas decomposition. SOLUTION: A gas is introduced through a gas inlet 18, so...

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Bibliographische Detailangaben
Hauptverfasser:	KIZAWA KENICHI, CHIYABARA KENICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve purity of a sample by eliminating the constraint on the pressure of gas for processing a sample, while promoting chemical reaction by generation of low molecular weight active species through gas decomposition. SOLUTION: A gas is introduced through a gas inlet 18, so that arc discharge is generated between an anode 24 and a cathode 22, to generate a plasma. An electron beam 34 is extracted from the plasma, and the electron beam 34 is guided into a reaction chamber 14 via a decompression chamber 12. The gas in the reaction chamber 14 is irradiated with electron beam 34 to generates a plasma 50, and a substrate 48 is processed with the plasma 50.