PLATING METHOD AND PLATING DEVICE

PROBLEM TO BE SOLVED: To remove air trapped into fine pores and to form good plating into dry via holes. SOLUTION: Via holes are formed on a semiconductor (GaAs) substrate 1 by dry treatment, thereafter, a power feeding layer is formed by sputtering, the substrate is brought into contact with vapor...

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Bibliographische Detailangaben
Hauptverfasser:	NAKAOKA YASUYUKI, SHONO TOMOTAKA
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To remove air trapped into fine pores and to form good plating into dry via holes. SOLUTION: Via holes are formed on a semiconductor (GaAs) substrate 1 by dry treatment, thereafter, a power feeding layer is formed by sputtering, the substrate is brought into contact with vapor generated by increasing the temp. of isopropyl alcohol 3 at the inside of a pretreating tank 2 by a heater 5 arranged at the lower part of the pretreating tank 2, and, after that, gold electroplating is executed in a plating tank.