SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

PROBLEM TO BE SOLVED: To further increase the surface area of a roughened-surface electrode used for a capacitor or the like. SOLUTION: In the semiconductor device with an electrode using a roughened- surface polycrystalline silicon film, a capacitor is installed through a dielectric film, in which the polycrystalline silicon film is laminated on an electrode in a film obtained by crystallizing amorphous silicon as the foundation film of the roughened-surface polycrystalline silicon film. The manufacturing method of the semiconductor device with the electrode using the roughened-surface polycrystalline silicon film has a process in which a base film 3a composed of amorphous silicon is formed, a process in which the roughened-surface polycrystalline silicon film is formed on the surface of an amorphous silicon film, a process in which amorphous silicon is crystallized, a process in which the dielectric layer 4 is laminated on the roughened-surface polycrystalline silicon film, and a process in which the polycrystalline silicon film is laminated on the dielectric film 4.