MANUFACTURE OF FIELD EMISSION ELEMENT

PROBLEM TO BE SOLVED: To equalize an emitter formed on a cathode electrode. SOLUTION: A first phosphorus diffused layer 4 diffused with P(phosphorus) is formed on a silicon substrate 1 by being ion-implanted with impurities in the direction perpendicular to the silicon substrate 1. A second phosphor...

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Bibliographische Detailangaben
1. Verfasser: KANETAKA MASANORI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To equalize an emitter formed on a cathode electrode. SOLUTION: A first phosphorus diffused layer 4 diffused with P(phosphorus) is formed on a silicon substrate 1 by being ion-implanted with impurities in the direction perpendicular to the silicon substrate 1. A second phosphorus diffused layer 8 diffused with P having higher concentration than the first phosphorus diffusion layer 4 is formed by being ion-implanted with P in the perpendicular direction and the revolutionarily inclining direction through a resist mask 12 in the first phosphorus diffused layer 4. A cathode electrode 11 formed with uniform emitter cones 4a, 4a,... is formed in the silicon substrate 1 by utilizing the difference of an etching rate between the first phosphorus diffused layer 4 and the second phosphorus diffused layer 8 to remove the second phosphorus diffusion layer 8.