SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device having a high ΦB, a low gate leak and a high withstand voltage. SOLUTION: A semiconductor device having an InP channel layer 3 and a Schottky layer 5 forming gates of hetero-junction FETs using the InP channel layer 3 comprises an InGaP grated...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: NEGISHI HITOSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device having a high ΦB, a low gate leak and a high withstand voltage. SOLUTION: A semiconductor device having an InP channel layer 3 and a Schottky layer 5 forming gates of hetero-junction FETs using the InP channel layer 3 comprises an InGaP grated layer 4 inserted between the Schottky layer 5 and the channel layer 3, the grated layer 4 matches it with the lattice constant of the AlGaAs Schottky layer different from the lattice constants of the substrate and the channels, thereby raising ΦB.