COPPER CMP METHOD FOR REDUCING DISHING AND EROSION

PROBLEM TO BE SOLVED: To planarize a Cu surface with reduced dishing and erosion, using chemical and mechanical polishing. SOLUTION: This method is for forming a Cu wiring of an integrated circuit with reduced dishing and erosion, using chemical and mechanical polishing. A conformal barrier layer 40...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	VINCENT C KOOSHIUISU, SHINN GREGORY B
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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