DIVIDED ITO SPUTTERING TARGET
PROBLEM TO BE SOLVED: To reduce the amt. of nodules to be generated in the surroundings of a divided part by controlling the relative density of each sintered body to the value equal to or above a specified one, controlling the width of the divided part formed by the adjacent sintered bodies to a sp...
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| creator | UCHIUMI KENTARO KUROSAWA SATOSHI |
| description | PROBLEM TO BE SOLVED: To reduce the amt. of nodules to be generated in the surroundings of a divided part by controlling the relative density of each sintered body to the value equal to or above a specified one, controlling the width of the divided part formed by the adjacent sintered bodies to a specified range and moreover controlling the average line center roughness of each sintered body relative in the divided part to a specified range. SOLUTION: The relative density of ITO sintered bodies 2 to be used is controlled to >=99%. The plural pieces of ITO sintered bodies 2 are arranged side by side on a backing plate 1 to form into a divided ITO target. Individual ITO sintered bodies 2 are respectively arranged with the width (the width 4 of the divided part) of 0.05 to 0.2 mm each other. At the time of subjecting the ITO sintered bodies 2 to grinding working to form into desired dimensions, the average line center roughness (Ra) of the faces composing the divided part is worked into 0.5 to 1 μm. Moreover, the edge part 3 in which the sputtering face and the face composing the divided part are crossed is worked preferably to R 0.5 to 2. |
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SOLUTION: The relative density of ITO sintered bodies 2 to be used is controlled to >=99%. The plural pieces of ITO sintered bodies 2 are arranged side by side on a backing plate 1 to form into a divided ITO target. Individual ITO sintered bodies 2 are respectively arranged with the width (the width 4 of the divided part) of 0.05 to 0.2 mm each other. At the time of subjecting the ITO sintered bodies 2 to grinding working to form into desired dimensions, the average line center roughness (Ra) of the faces composing the divided part is worked into 0.5 to 1 μm. Moreover, the edge part 3 in which the sputtering face and the face composing the divided part are crossed is worked preferably to R 0.5 to 2.</description><edition>7</edition><language>eng</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20001212&DB=EPODOC&CC=JP&NR=2000345326A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20001212&DB=EPODOC&CC=JP&NR=2000345326A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UCHIUMI KENTARO</creatorcontrib><creatorcontrib>KUROSAWA SATOSHI</creatorcontrib><title>DIVIDED ITO SPUTTERING TARGET</title><description>PROBLEM TO BE SOLVED: To reduce the amt. of nodules to be generated in the surroundings of a divided part by controlling the relative density of each sintered body to the value equal to or above a specified one, controlling the width of the divided part formed by the adjacent sintered bodies to a specified range and moreover controlling the average line center roughness of each sintered body relative in the divided part to a specified range. SOLUTION: The relative density of ITO sintered bodies 2 to be used is controlled to >=99%. The plural pieces of ITO sintered bodies 2 are arranged side by side on a backing plate 1 to form into a divided ITO target. Individual ITO sintered bodies 2 are respectively arranged with the width (the width 4 of the divided part) of 0.05 to 0.2 mm each other. At the time of subjecting the ITO sintered bodies 2 to grinding working to form into desired dimensions, the average line center roughness (Ra) of the faces composing the divided part is worked into 0.5 to 1 μm. Moreover, the edge part 3 in which the sputtering face and the face composing the divided part are crossed is worked preferably to R 0.5 to 2.</description><subject>ARTIFICIAL STONE</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJB18QzzdHF1UfAM8VcIDggNCXEN8vRzVwhxDHJ3DeFhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBgbGJqbGRmaOxkQpAgDZiiGL</recordid><startdate>20001212</startdate><enddate>20001212</enddate><creator>UCHIUMI KENTARO</creator><creator>KUROSAWA SATOSHI</creator><scope>EVB</scope></search><sort><creationdate>20001212</creationdate><title>DIVIDED ITO SPUTTERING TARGET</title><author>UCHIUMI KENTARO ; KUROSAWA SATOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2000345326A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>ARTIFICIAL STONE</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>UCHIUMI KENTARO</creatorcontrib><creatorcontrib>KUROSAWA SATOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UCHIUMI KENTARO</au><au>KUROSAWA SATOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DIVIDED ITO SPUTTERING TARGET</title><date>2000-12-12</date><risdate>2000</risdate><abstract>PROBLEM TO BE SOLVED: To reduce the amt. of nodules to be generated in the surroundings of a divided part by controlling the relative density of each sintered body to the value equal to or above a specified one, controlling the width of the divided part formed by the adjacent sintered bodies to a specified range and moreover controlling the average line center roughness of each sintered body relative in the divided part to a specified range. SOLUTION: The relative density of ITO sintered bodies 2 to be used is controlled to >=99%. The plural pieces of ITO sintered bodies 2 are arranged side by side on a backing plate 1 to form into a divided ITO target. Individual ITO sintered bodies 2 are respectively arranged with the width (the width 4 of the divided part) of 0.05 to 0.2 mm each other. At the time of subjecting the ITO sintered bodies 2 to grinding working to form into desired dimensions, the average line center roughness (Ra) of the faces composing the divided part is worked into 0.5 to 1 μm. Moreover, the edge part 3 in which the sputtering face and the face composing the divided part are crossed is worked preferably to R 0.5 to 2.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE |
| title | DIVIDED ITO SPUTTERING TARGET |
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