DIVIDED ITO SPUTTERING TARGET

PROBLEM TO BE SOLVED: To reduce the amt. of nodules to be generated in the surroundings of a divided part by controlling the relative density of each sintered body to the value equal to or above a specified one, controlling the width of the divided part formed by the adjacent sintered bodies to a sp...

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Bibliographische Detailangaben
Hauptverfasser: UCHIUMI KENTARO, KUROSAWA SATOSHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To reduce the amt. of nodules to be generated in the surroundings of a divided part by controlling the relative density of each sintered body to the value equal to or above a specified one, controlling the width of the divided part formed by the adjacent sintered bodies to a specified range and moreover controlling the average line center roughness of each sintered body relative in the divided part to a specified range. SOLUTION: The relative density of ITO sintered bodies 2 to be used is controlled to >=99%. The plural pieces of ITO sintered bodies 2 are arranged side by side on a backing plate 1 to form into a divided ITO target. Individual ITO sintered bodies 2 are respectively arranged with the width (the width 4 of the divided part) of 0.05 to 0.2 mm each other. At the time of subjecting the ITO sintered bodies 2 to grinding working to form into desired dimensions, the average line center roughness (Ra) of the faces composing the divided part is worked into 0.5 to 1 μm. Moreover, the edge part 3 in which the sputtering face and the face composing the divided part are crossed is worked preferably to R 0.5 to 2.