RESIST HARDENING DEVICE

PROBLEM TO BE SOLVED: To provide a resist hardening device for preventing generation of a scratch on the back face of a silicon wafer even at the time of carrying out a resist hardening treatment by vacuum absorbing a silicon wafer to which resist is applied on a work stage, and irradiating the resi...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	TACHIKA NOZOMI, MIMURA YOSHIKI, KURAMOCHI SATOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPARATUS SPECIALLY ADAPTED THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a resist hardening device for preventing generation of a scratch on the back face of a silicon wafer even at the time of carrying out a resist hardening treatment by vacuum absorbing a silicon wafer to which resist is applied on a work stage, and irradiating the resist with ultraviolet rays while heating and cooling the silicon wafer. SOLUTION: This resist hardening device is provided with a light source part radiating ultraviolet rays, and a work stage 10 having a work holding means for vacuum absorbing a silicon wafer and a work temperature controlling means. In this case, the silicon wafer held on the upper face of the work stage is heated, and resist applied to the silicon wafer is irradiated with the ultraviolet rays so as to be hardened. At that time, a plate 60 made of any materials of Si(silicon), SiO2(crystal), SiC(silicon carbide), and Si3N4 (silicon nitride) is interposed between the upper face of the work station and the silicon wafer, and the resist applied to the silicon wafer is irradiated with the ultraviolet rays in a state that the plate and the silicon wafer are vacuum absorbed to the work stage.