METAL DEPOSITION METHOD AND ITS APPARATUS

PROBLEM TO BE SOLVED: To execute good-quality treatment with a clean treating liquid and to lessen the laboriousness in maintenance and management accompanied with using of a filter by introducing the whole or part of the treating liquid into a centrifuge and separating the particles contained in th...

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Bibliographische Detailangaben
1. Verfasser:	KOGURE NAOAKI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CENTRIFUGAL APPARATUS OR MACHINES FOR CARRYING-OUT PHYSICAL ORCHEMICAL PROCESSES CENTRIFUGES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Zusammenfassung:	PROBLEM TO BE SOLVED: To execute good-quality treatment with a clean treating liquid and to lessen the laboriousness in maintenance and management accompanied with using of a filter by introducing the whole or part of the treating liquid into a centrifuge and separating the particles contained in the treating liquid. SOLUTION: A semiconductor substrate 1 is placed on a loading section 10a in a treating vessel 10 and is immersed into the treating liquid (plating liquid). When the treating liquid is circulated to a treating liquid circulating route by driving a pump 14, the treating liquid overflowing from the treating vessel 10 is sent from a storage tank 12 into the centrifugal settling and separating machine 16, where the particles contained in the treating liquid are separated. The clarified treating liquid flows out of an outlet port 22 and returns to the treating vessel 12. After the solid particles are removed by using the centrifugal separation method in such a manner, the clean liquid (the light liquid) and the thick liquid (the heavy liquid) thickened with the particles are separated and are continuously taken out. If the plating treatment to deposit copper in the microrecesses on the semiconductor substrate 1 by using the resulted clean liquid is executed, the pollution by the particles may be prevented.