FIELD EMISSION TYPE ELECTRON SOURCE

PROBLEM TO BE SOLVED: To provide a low cost field emission type electron source having high performance and capable of obtaining a gate electrode having an opening diameter of submicrons or below by a simple process. SOLUTION: In this field emission type electron source, electrons are emitted from e...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: OKAMURA NORIO, NANBA MASAKAZU, OKAZAKI SABURO, INOUE SHIGERU, HIRANO YOSHIYUKI, YAMAGISHI TOSHIRO, KATSUHARA YUKINORI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a low cost field emission type electron source having high performance and capable of obtaining a gate electrode having an opening diameter of submicrons or below by a simple process. SOLUTION: In this field emission type electron source, electrons are emitted from emitters 5 by applying voltage between a cathode electrode 2 and gate electrodes 6 opposing to each other and interposing an insulating layer. The emitters 5 are formed in micropores 4 using a porous insulating layer 3 in which many micropores 4 extending in the thickness direction are formed by an anodic oxidation method as an insulating layer.