METHOD FOR REMOVING PHOTORESIST MATERIAL IN ORIGINAL POSITION

PROBLEM TO BE SOLVED: To make it possible to remove a photoresist material in an original position by etching a target by use of a pattern on the photoresist material on an etching machine, removing part of the photoresist by use of a plasma and removing the entire photoresist by use of a solvent. SOLUTION: The step of patterning and forming a complementary type metal oxidized film semiconductor (CMOS) photosensor 10 and the stage of removing a completely dried photoresist layer 24 are executed on the same etching so as to eliminate the need for transferring the CMOS photosensor 10 onto another etching machine. The production time for forming the CMOS photosensor 10 is thereby saved. Further, the external influences from the environment decrease. The oxygen plasma in the original position is given in order to remove the portion of the dried photoresist layer 24 during executing the pattern forming step. The solvent is thereafter used in order to effectively removing another photoresist layer 24 on the polyacrylate layer of the CMOS photosensor 10.