METHOD FOR MODIFYING PHASE INVERSION MASK OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To prevent the occurrence of a by-product of modification and the occurrence of defects in a quartz substrate when a phase inversion mask is modified. SOLUTION: When the phase inversion mask of a semiconductor device is modified so as to remove a bridge 25 which has occurred be...

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Bibliographische Detailangaben
Hauptverfasser:	SHIN YOTETSU, GU EIMO, KIN HOKO, BE SOMAN, AN TOSHUN, KO KOJUN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent the occurrence of a by-product of modification and the occurrence of defects in a quartz substrate when a phase inversion mask is modified. SOLUTION: When the phase inversion mask of a semiconductor device is modified so as to remove a bridge 25 which has occurred between phase inversion layers 23 formed on a quartz substrate 21, charged ions are applied to the bridge by an FIB(focused ion beam) system to carry out primary modification and then laser light is radiated on the primarily modified bridge part to remove the bridge by secondary modification.