PRODUCTION OF SILICON WAFER
PROBLEM TO BE SOLVED: To provide a silicon wafer which contains in each of its bulk and surface, a reduced concentration of Cu and the Cu contamination of which is eliminated and which has excellent device properties. SOLUTION: This production process comprises: subjecting a wafer face of the rear o...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | MIYAZAKI MORIMASA |
| description | PROBLEM TO BE SOLVED: To provide a silicon wafer which contains in each of its bulk and surface, a reduced concentration of Cu and the Cu contamination of which is eliminated and which has excellent device properties. SOLUTION: This production process comprises: subjecting a wafer face of the rear or surface side of a mirror-polished silicon wafer to heat treatment at 600-1,000 deg.C under such conditions that a temperature gradient is caused in the thickness direction of the wafer; and thereafter, cleaning the wafer; wherein desirably, before performing the heat treatment at 600-1,000 deg.C, the mirror- polished silicon wafer is preferable to be subjected to heat treatment at 900-1,000 deg.C and further, the temperature gradient in the thickness direction of the wafer, namely, the temperature difference between the rear side and the surface side of the wafer is preferable to be adjusted to >=50 deg.C. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2000290100A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2000290100A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2000290100A3</originalsourceid><addsrcrecordid>eNrjZJAOCPJ3CXUO8fT3U_B3Uwj29PF0BjLDHd1cg3gYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBgYGRpYGhgYGjMVGKAJCpINQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PRODUCTION OF SILICON WAFER</title><source>esp@cenet</source><creator>MIYAZAKI MORIMASA</creator><creatorcontrib>MIYAZAKI MORIMASA</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a silicon wafer which contains in each of its bulk and surface, a reduced concentration of Cu and the Cu contamination of which is eliminated and which has excellent device properties. SOLUTION: This production process comprises: subjecting a wafer face of the rear or surface side of a mirror-polished silicon wafer to heat treatment at 600-1,000 deg.C under such conditions that a temperature gradient is caused in the thickness direction of the wafer; and thereafter, cleaning the wafer; wherein desirably, before performing the heat treatment at 600-1,000 deg.C, the mirror- polished silicon wafer is preferable to be subjected to heat treatment at 900-1,000 deg.C and further, the temperature gradient in the thickness direction of the wafer, namely, the temperature difference between the rear side and the surface side of the wafer is preferable to be adjusted to >=50 deg.C.</description><edition>7</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20001017&DB=EPODOC&CC=JP&NR=2000290100A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20001017&DB=EPODOC&CC=JP&NR=2000290100A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIYAZAKI MORIMASA</creatorcontrib><title>PRODUCTION OF SILICON WAFER</title><description>PROBLEM TO BE SOLVED: To provide a silicon wafer which contains in each of its bulk and surface, a reduced concentration of Cu and the Cu contamination of which is eliminated and which has excellent device properties. SOLUTION: This production process comprises: subjecting a wafer face of the rear or surface side of a mirror-polished silicon wafer to heat treatment at 600-1,000 deg.C under such conditions that a temperature gradient is caused in the thickness direction of the wafer; and thereafter, cleaning the wafer; wherein desirably, before performing the heat treatment at 600-1,000 deg.C, the mirror- polished silicon wafer is preferable to be subjected to heat treatment at 900-1,000 deg.C and further, the temperature gradient in the thickness direction of the wafer, namely, the temperature difference between the rear side and the surface side of the wafer is preferable to be adjusted to >=50 deg.C.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAOCPJ3CXUO8fT3U_B3Uwj29PF0BjLDHd1cg3gYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBgYGRpYGhgYGjMVGKAJCpINQ</recordid><startdate>20001017</startdate><enddate>20001017</enddate><creator>MIYAZAKI MORIMASA</creator><scope>EVB</scope></search><sort><creationdate>20001017</creationdate><title>PRODUCTION OF SILICON WAFER</title><author>MIYAZAKI MORIMASA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2000290100A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>MIYAZAKI MORIMASA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIYAZAKI MORIMASA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION OF SILICON WAFER</title><date>2000-10-17</date><risdate>2000</risdate><abstract>PROBLEM TO BE SOLVED: To provide a silicon wafer which contains in each of its bulk and surface, a reduced concentration of Cu and the Cu contamination of which is eliminated and which has excellent device properties. SOLUTION: This production process comprises: subjecting a wafer face of the rear or surface side of a mirror-polished silicon wafer to heat treatment at 600-1,000 deg.C under such conditions that a temperature gradient is caused in the thickness direction of the wafer; and thereafter, cleaning the wafer; wherein desirably, before performing the heat treatment at 600-1,000 deg.C, the mirror- polished silicon wafer is preferable to be subjected to heat treatment at 900-1,000 deg.C and further, the temperature gradient in the thickness direction of the wafer, namely, the temperature difference between the rear side and the surface side of the wafer is preferable to be adjusted to >=50 deg.C.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2000290100A |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PRODUCTION OF SILICON WAFER |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T02%3A36%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MIYAZAKI%20MORIMASA&rft.date=2000-10-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2000290100A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |