PRODUCTION OF SILICON WAFER

PRODUCTION OF SILICON WAFER

PROBLEM TO BE SOLVED: To provide a silicon wafer which contains in each of its bulk and surface, a reduced concentration of Cu and the Cu contamination of which is eliminated and which has excellent device properties. SOLUTION: This production process comprises: subjecting a wafer face of the rear o...

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Bibliographische Detailangaben
1. Verfasser: MIYAZAKI MORIMASA
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a silicon wafer which contains in each of its bulk and surface, a reduced concentration of Cu and the Cu contamination of which is eliminated and which has excellent device properties. SOLUTION: This production process comprises: subjecting a wafer face of the rear or surface side of a mirror-polished silicon wafer to heat treatment at 600-1,000 deg.C under such conditions that a temperature gradient is caused in the thickness direction of the wafer; and thereafter, cleaning the wafer; wherein desirably, before performing the heat treatment at 600-1,000 deg.C, the mirror- polished silicon wafer is preferable to be subjected to heat treatment at 900-1,000 deg.C and further, the temperature gradient in the thickness direction of the wafer, namely, the temperature difference between the rear side and the surface side of the wafer is preferable to be adjusted to >=50 deg.C.