NITRIDE SEMICONDUCTOR ELEMENT AND FABRICATION THEREOF

PROBLEM TO BE SOLVED: To form a nitride semiconductor element without requiring separation of a chip from a wafer by growing a nitride semiconductor on a substantial spherical crystal surface. SOLUTION: A spherical substrate 1 is mounted in the opening 4 of a basic body 2 and set in a reaction container while being supported by a support 3 and then an n type nitride semiconductor layer 10 is formed by growing a buffer layer 2 of GaN on the substrate 1 at 510 deg.C using hydrogen, ammonia and TMG. At first, the temperature in the reaction container is raised to 1050 deg.C and undoped GaN is gown using trimethyl gallium, TMG and ammonia gas while Si doped GaN is grown using TMG, ammonia gas and silane gas. Subsequently, undoped GaN is grown by stopping supply only of silane gas and undoped In0.4Ga0.6N layer is grown at 800 deg.C using TMG, trimethyl indium, TMI and ammonia to obtain an active layer 11. Since a nitride semiconductor is grown using a substrate in already separated state, destruction of semiconductor layer incident to separation is eliminated.