SELECTIVE GROWTH METHOD

PROBLEM TO BE SOLVED: To allow selective growth up to a film thickness applicable to a device using a hot wall furnace, related to a silicon or silicon-germanium mixed- crystal epitaxial growth. SOLUTION: When a silicon crystal layer is grown on a silicon exposed surface on a silicon substrate 17 wh...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ASARI SHIN, KOIZUMI KAZUYUKI, TAKAHASHI SEIICHI, KOMATSU TAKASHI, MIHASHI TETSUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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