SELECTIVE GROWTH METHOD

PROBLEM TO BE SOLVED: To allow selective growth up to a film thickness applicable to a device using a hot wall furnace, related to a silicon or silicon-germanium mixed- crystal epitaxial growth. SOLUTION: When a silicon crystal layer is grown on a silicon exposed surface on a silicon substrate 17 where an insulating film is formed in a reactive chamber 12, such a low-temperature and low water partial-pressure condition as growth temperature is 600 deg.C while a water partial pressure within the reactive chamber 12 is 2×10-8 pa or less, is provided. An epitaxial growth under the condition allows the selective growth of about 120 nm even with no Cl group gas added, while the selective growth of about 280 nm takes place with added Cl group gas thereafter. As a result, even if the reactive chamber 12 is so-called hot wall type, a silicon crystal layer of film thickness about 400 nm is selectively grown on a silicon exposed surface.