LIQUID CRYSTAL DISPLAY DEVICE AND ITS PRODUCTION

PROBLEM TO BE SOLVED: To prevent defects such as cutting in wires, to significantly improve the resistance of terminals against electrolytic corrosion and to obtain a low-cost display device of high reliability, without display defects by forming a laminar structure of a metal film coated with an am...

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Bibliographische Detailangaben
Hauptverfasser:	KANEKO TOSHITERU, ONO KIKUO, TERAKADO MASAMICHI, IKEDA HAJIME
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent defects such as cutting in wires, to significantly improve the resistance of terminals against electrolytic corrosion and to obtain a low-cost display device of high reliability, without display defects by forming a laminar structure of a metal film coated with an amorphous oxide conductive film for various kinds of wirings and electrodes of a liquid crystal panel and in-batch patterning the layers in one process with the identical etchant to form wirings and electrodes. SOLUTION: A thin film for a metal wiring 2, consisting of Cr or Mo alloy (Cr-Mo), Cr-W or the like, is formed by sputtering at 120 deg.C film forming temp. on an active matrix substrate 1. Then an indium-tin oxide film 3 is formed continuously also at 120 deg.C film forming temp., to form a metal film having a multilayered structure. Then the obtd. metal film is exposed to light by using a photomask, having a gate wiring pattern and etched in an etchant of a cerium (II) nitrate ammonium aq. soln., to form the gate wiring. At a same time, a counter electrode wiring is formed.