METHOD FOR REMOVING DEPOSIT FILM ON SURFACE OF SUBSTRATE HOLDER IN FILM FORMING DEVICE, AND THE FILM FORMING DEVICE

PROBLEM TO BE SOLVED: To prevent a thin film deposited on a substrate holder from being peeled and adhering to a substrate in particles. SOLUTION: A substrate holder 90 in which a thin film is deposited on a surface of a holding claw 91 moves in a substrate non-holding condition to a film-removing c...

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Bibliographische Detailangaben
Hauptverfasser:	MAEDA KOJI, ARIGA YOSHIKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent a thin film deposited on a substrate holder from being peeled and adhering to a substrate in particles. SOLUTION: A substrate holder 90 in which a thin film is deposited on a surface of a holding claw 91 moves in a substrate non-holding condition to a film-removing chamber 70 provided in a branched manner so as to communicate the vacuum to a square conveying passage in which a plurality of vacuum chambers including film forming chambers are longitudinally arranged. A high frequency power source 73 is connected to the holder main body 92 through a movable electrode 74, and the high frequency electric field is established in the film-removing chamber 70. The high frequency discharge is generated in the gas introduced by a gas introduction system 72 to form the plasma, and the deposited film on the surface of the holding claw 91 is sputter-etched by the ion impulse, and removed in the vacuum.