METHOD FOR ALTERING POLISHING PATTERN DEPENDENCE IN CHEMICAL MECHANICAL POLISHING
PROBLEM TO BE SOLVED: To reduce influences on pattern dependence so that a polishing rate is substantially independent of a characteristic size and density. SOLUTION: This method for CMP contains the steps of forming a CMP slurry containing ceric oxide, adding a slurry reform to a slurry, namely pol...
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| creator | DAVID RUSSELL EVANS |
| description | PROBLEM TO BE SOLVED: To reduce influences on pattern dependence so that a polishing rate is substantially independent of a characteristic size and density. SOLUTION: This method for CMP contains the steps of forming a CMP slurry containing ceric oxide, adding a slurry reform to a slurry, namely polishing a low structure region at substantially zero rate with the slurry reform for polishing a high structure region at a rate close to a blanket polishing rate, and polishing a structure by the use of the slurry containing a reform. |
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SOLUTION: This method for CMP contains the steps of forming a CMP slurry containing ceric oxide, adding a slurry reform to a slurry, namely polishing a low structure region at substantially zero rate with the slurry reform for polishing a high structure region at a rate close to a blanket polishing rate, and polishing a structure by the use of the slurry containing a reform.</description><edition>7</edition><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; TRANSPORTING</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000929&DB=EPODOC&CC=JP&NR=2000269172A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000929&DB=EPODOC&CC=JP&NR=2000269172A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAVID RUSSELL EVANS</creatorcontrib><title>METHOD FOR ALTERING POLISHING PATTERN DEPENDENCE IN CHEMICAL MECHANICAL POLISHING</title><description>PROBLEM TO BE SOLVED: To reduce influences on pattern dependence so that a polishing rate is substantially independent of a characteristic size and density. SOLUTION: This method for CMP contains the steps of forming a CMP slurry containing ceric oxide, adding a slurry reform to a slurry, namely polishing a low structure region at substantially zero rate with the slurry reform for polishing a high structure region at a rate close to a blanket polishing rate, and polishing a structure by the use of the slurry containing a reform.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj0dQ3x8HdRcPMPUnD0CXEN8vRzVwjw9_EM9gCzHEOAYn4KLq4Brn4urn7OrgqefgrOHq6-ns6OPgq-rs4ejn5gJlwPDwNrWmJOcSovlOZmUHJzDXH20E0tyI9PLS5ITE7NSy2J9wowMjAwMDKzNDQ3cjQmShEA7o0vmQ</recordid><startdate>20000929</startdate><enddate>20000929</enddate><creator>DAVID RUSSELL EVANS</creator><scope>EVB</scope></search><sort><creationdate>20000929</creationdate><title>METHOD FOR ALTERING POLISHING PATTERN DEPENDENCE IN CHEMICAL MECHANICAL POLISHING</title><author>DAVID RUSSELL EVANS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2000269172A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>DAVID RUSSELL EVANS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAVID RUSSELL EVANS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR ALTERING POLISHING PATTERN DEPENDENCE IN CHEMICAL MECHANICAL POLISHING</title><date>2000-09-29</date><risdate>2000</risdate><abstract>PROBLEM TO BE SOLVED: To reduce influences on pattern dependence so that a polishing rate is substantially independent of a characteristic size and density. SOLUTION: This method for CMP contains the steps of forming a CMP slurry containing ceric oxide, adding a slurry reform to a slurry, namely polishing a low structure region at substantially zero rate with the slurry reform for polishing a high structure region at a rate close to a blanket polishing rate, and polishing a structure by the use of the slurry containing a reform.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING |
| title | METHOD FOR ALTERING POLISHING PATTERN DEPENDENCE IN CHEMICAL MECHANICAL POLISHING |
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