METHOD FOR ALTERING POLISHING PATTERN DEPENDENCE IN CHEMICAL MECHANICAL POLISHING

PROBLEM TO BE SOLVED: To reduce influences on pattern dependence so that a polishing rate is substantially independent of a characteristic size and density. SOLUTION: This method for CMP contains the steps of forming a CMP slurry containing ceric oxide, adding a slurry reform to a slurry, namely pol...

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Bibliographische Detailangaben
1. Verfasser:	DAVID RUSSELL EVANS
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce influences on pattern dependence so that a polishing rate is substantially independent of a characteristic size and density. SOLUTION: This method for CMP contains the steps of forming a CMP slurry containing ceric oxide, adding a slurry reform to a slurry, namely polishing a low structure region at substantially zero rate with the slurry reform for polishing a high structure region at a rate close to a blanket polishing rate, and polishing a structure by the use of the slurry containing a reform.