METHOD FOR FORMING COUPLED SUBSTRATE CONTAINING PLANAR INTRINSIC GETTERING ZONE, AND SUBSTRATE FORMED BY THE METHOD

PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor device and an integrated circuit for manufacturing a coupled semiconductor-on-insulator. SOLUTION: In this method for forming a coupled substrate, ions of a semiconductor material are implanted into a depth selected by a wafer on the surface of a wafer 15 of a single crystal semiconductor material, and an amorphous layer of the semiconductor material is formed at a position adjacent to the surface. A layer 25 of the amorphous semiconductor material is substantially positioned in the selected depth and is expanded up to a zone which is a substantially plane composed of the monocrystal semiconductor material damaged by lattice defects, namely extended to the end part of the range of ion implantation damages. An undamaged material 26 under the selected depth is composed of a first layer 15 of the single crystal semiconductor material. The wafer causes the amorphous layer to change into a second layer 16 of the single crystal semiconductor material, and further the second layer 16 is heated under conditions effective to combine the zone of the single crystal semiconductor material damaged into one, and forms an intrinsic gettering zone 17.