MULTIFINGERED BIPOLAR TRANSISTOR AND ANALOG SIGNAL AMPLIFIER
PROBLEM TO BE SOLVED: To reduce an occupied area and increase the degree of freedom of layout in a multifinger type bipolar transistor of high gain. SOLUTION: This bipolar transistor is a multifingered bipolar transistor provided with a plurality of emitter fingers 101, a ballast resistance 102 conn...
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creator | HIRAYAMA TOMOO |
description | PROBLEM TO BE SOLVED: To reduce an occupied area and increase the degree of freedom of layout in a multifinger type bipolar transistor of high gain. SOLUTION: This bipolar transistor is a multifingered bipolar transistor provided with a plurality of emitter fingers 101, a ballast resistance 102 connected in series with each of the emitter fingers, and a capacitor 103 connected in parallel with each of the ballast resistances. The ballast resistance 102 is formed by clamping a resistance body 105 with an emitter wiring E and the emitter finger. The capacitor 103 is formed by clamping an insulating layer 108 with the emitter wiring and the emitter finger. |
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SOLUTION: This bipolar transistor is a multifingered bipolar transistor provided with a plurality of emitter fingers 101, a ballast resistance 102 connected in series with each of the emitter fingers, and a capacitor 103 connected in parallel with each of the ballast resistances. The ballast resistance 102 is formed by clamping a resistance body 105 with an emitter wiring E and the emitter finger. The capacitor 103 is formed by clamping an insulating layer 108 with the emitter wiring and the emitter finger.</description><edition>7</edition><language>eng</language><subject>AMPLIFIERS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000914&DB=EPODOC&CC=JP&NR=2000252293A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000914&DB=EPODOC&CC=JP&NR=2000252293A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIRAYAMA TOMOO</creatorcontrib><title>MULTIFINGERED BIPOLAR TRANSISTOR AND ANALOG SIGNAL AMPLIFIER</title><description>PROBLEM TO BE SOLVED: To reduce an occupied area and increase the degree of freedom of layout in a multifinger type bipolar transistor of high gain. SOLUTION: This bipolar transistor is a multifingered bipolar transistor provided with a plurality of emitter fingers 101, a ballast resistance 102 connected in series with each of the emitter fingers, and a capacitor 103 connected in parallel with each of the ballast resistances. The ballast resistance 102 is formed by clamping a resistance body 105 with an emitter wiring E and the emitter finger. The capacitor 103 is formed by clamping an insulating layer 108 with the emitter wiring and the emitter finger.</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDxDfUJ8XTz9HN3DXJ1UXDyDPD3cQxSCAly9Av2DA7xD1Jw9HMBYkcff3eFYE93IEPB0TfAB6jFNYiHgTUtMac4lRdKczMoubmGOHvophbkx6cWFyQmp-allsR7BRgZGBgYmRoZWRo7GhOlCABsfCoW</recordid><startdate>20000914</startdate><enddate>20000914</enddate><creator>HIRAYAMA TOMOO</creator><scope>EVB</scope></search><sort><creationdate>20000914</creationdate><title>MULTIFINGERED BIPOLAR TRANSISTOR AND ANALOG SIGNAL AMPLIFIER</title><author>HIRAYAMA TOMOO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2000252293A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HIRAYAMA TOMOO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HIRAYAMA TOMOO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MULTIFINGERED BIPOLAR TRANSISTOR AND ANALOG SIGNAL AMPLIFIER</title><date>2000-09-14</date><risdate>2000</risdate><abstract>PROBLEM TO BE SOLVED: To reduce an occupied area and increase the degree of freedom of layout in a multifinger type bipolar transistor of high gain. SOLUTION: This bipolar transistor is a multifingered bipolar transistor provided with a plurality of emitter fingers 101, a ballast resistance 102 connected in series with each of the emitter fingers, and a capacitor 103 connected in parallel with each of the ballast resistances. The ballast resistance 102 is formed by clamping a resistance body 105 with an emitter wiring E and the emitter finger. The capacitor 103 is formed by clamping an insulating layer 108 with the emitter wiring and the emitter finger.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | MULTIFINGERED BIPOLAR TRANSISTOR AND ANALOG SIGNAL AMPLIFIER |
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