MULTIFINGERED BIPOLAR TRANSISTOR AND ANALOG SIGNAL AMPLIFIER

MULTIFINGERED BIPOLAR TRANSISTOR AND ANALOG SIGNAL AMPLIFIER

PROBLEM TO BE SOLVED: To reduce an occupied area and increase the degree of freedom of layout in a multifinger type bipolar transistor of high gain. SOLUTION: This bipolar transistor is a multifingered bipolar transistor provided with a plurality of emitter fingers 101, a ballast resistance 102 conn...

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Bibliographische Detailangaben
1. Verfasser: HIRAYAMA TOMOO
Format: Patent
Sprache:eng
Schlagworte:
AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To reduce an occupied area and increase the degree of freedom of layout in a multifinger type bipolar transistor of high gain. SOLUTION: This bipolar transistor is a multifingered bipolar transistor provided with a plurality of emitter fingers 101, a ballast resistance 102 connected in series with each of the emitter fingers, and a capacitor 103 connected in parallel with each of the ballast resistances. The ballast resistance 102 is formed by clamping a resistance body 105 with an emitter wiring E and the emitter finger. The capacitor 103 is formed by clamping an insulating layer 108 with the emitter wiring and the emitter finger.