POWER TRANSISTOR

PROBLEM TO BE SOLVED: To obtain a desired detection voltage without deteriorating the characteristics of a transistor by providing a current detection part for setting a specific voltage for current detection in the fixed region between first and second bonding pad parts. SOLUTION: An electrode fing...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	KAMIUCHI HAJIME
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CONTROLLING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS REGULATING SEMICONDUCTOR DEVICES SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	KAMIUCHI HAJIME
description	PROBLEM TO BE SOLVED: To obtain a desired detection voltage without deteriorating the characteristics of a transistor by providing a current detection part for setting a specific voltage for current detection in the fixed region between first and second bonding pad parts. SOLUTION: An electrode finger 6 as a current detection part is provided in the fixed region between first and second bonding pad parts, and length in the longitudinal direction of the emitter contact pattern of the electrode finger 6 is set shorter than that of an emitter contact pattern 8a of another electrode finger. At this time, when the length of the emitter contact pattern 8a is the same as that of another emitter contact pattern, connection is made to the electrode finger 6, namely, the bonding pad for current detection, thus obtaining a desired detection voltage without deteriorating the characteristics of a transistor by changing the structure of the electrode finger 6 only.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2000252292A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2000252292A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2000252292A3</originalsourceid><addsrcrecordid>eNrjZBAI8A93DVIICXL0C_YMDvEP4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGBkamRkaWRo7GRCkCAFMTHiE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>POWER TRANSISTOR</title><source>esp@cenet</source><creator>KAMIUCHI HAJIME</creator><creatorcontrib>KAMIUCHI HAJIME</creatorcontrib><description>PROBLEM TO BE SOLVED: To obtain a desired detection voltage without deteriorating the characteristics of a transistor by providing a current detection part for setting a specific voltage for current detection in the fixed region between first and second bonding pad parts. SOLUTION: An electrode finger 6 as a current detection part is provided in the fixed region between first and second bonding pad parts, and length in the longitudinal direction of the emitter contact pattern of the electrode finger 6 is set shorter than that of an emitter contact pattern 8a of another electrode finger. At this time, when the length of the emitter contact pattern 8a is the same as that of another emitter contact pattern, connection is made to the electrode finger 6, namely, the bonding pad for current detection, thus obtaining a desired detection voltage without deteriorating the characteristics of a transistor by changing the structure of the electrode finger 6 only.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CONTROLLING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PHYSICS ; REGULATING ; SEMICONDUCTOR DEVICES ; SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000914&DB=EPODOC&CC=JP&NR=2000252292A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000914&DB=EPODOC&CC=JP&NR=2000252292A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAMIUCHI HAJIME</creatorcontrib><title>POWER TRANSISTOR</title><description>PROBLEM TO BE SOLVED: To obtain a desired detection voltage without deteriorating the characteristics of a transistor by providing a current detection part for setting a specific voltage for current detection in the fixed region between first and second bonding pad parts. SOLUTION: An electrode finger 6 as a current detection part is provided in the fixed region between first and second bonding pad parts, and length in the longitudinal direction of the emitter contact pattern of the electrode finger 6 is set shorter than that of an emitter contact pattern 8a of another electrode finger. At this time, when the length of the emitter contact pattern 8a is the same as that of another emitter contact pattern, connection is made to the electrode finger 6, namely, the bonding pad for current detection, thus obtaining a desired detection voltage without deteriorating the characteristics of a transistor by changing the structure of the electrode finger 6 only.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONTROLLING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PHYSICS</subject><subject>REGULATING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAI8A93DVIICXL0C_YMDvEP4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGBkamRkaWRo7GRCkCAFMTHiE</recordid><startdate>20000914</startdate><enddate>20000914</enddate><creator>KAMIUCHI HAJIME</creator><scope>EVB</scope></search><sort><creationdate>20000914</creationdate><title>POWER TRANSISTOR</title><author>KAMIUCHI HAJIME</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2000252292A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CONTROLLING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PHYSICS</topic><topic>REGULATING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAMIUCHI HAJIME</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAMIUCHI HAJIME</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POWER TRANSISTOR</title><date>2000-09-14</date><risdate>2000</risdate><abstract>PROBLEM TO BE SOLVED: To obtain a desired detection voltage without deteriorating the characteristics of a transistor by providing a current detection part for setting a specific voltage for current detection in the fixed region between first and second bonding pad parts. SOLUTION: An electrode finger 6 as a current detection part is provided in the fixed region between first and second bonding pad parts, and length in the longitudinal direction of the emitter contact pattern of the electrode finger 6 is set shorter than that of an emitter contact pattern 8a of another electrode finger. At this time, when the length of the emitter contact pattern 8a is the same as that of another emitter contact pattern, connection is made to the electrode finger 6, namely, the bonding pad for current detection, thus obtaining a desired detection voltage without deteriorating the characteristics of a transistor by changing the structure of the electrode finger 6 only.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_JP2000252292A
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS CONTROLLING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS REGULATING SEMICONDUCTOR DEVICES SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
title	POWER TRANSISTOR
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T00%3A54%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KAMIUCHI%20HAJIME&rft.date=2000-09-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2000252292A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true