POWER TRANSISTOR

PROBLEM TO BE SOLVED: To obtain a desired detection voltage without deteriorating the characteristics of a transistor by providing a current detection part for setting a specific voltage for current detection in the fixed region between first and second bonding pad parts. SOLUTION: An electrode fing...

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Bibliographische Detailangaben
1. Verfasser: KAMIUCHI HAJIME
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a desired detection voltage without deteriorating the characteristics of a transistor by providing a current detection part for setting a specific voltage for current detection in the fixed region between first and second bonding pad parts. SOLUTION: An electrode finger 6 as a current detection part is provided in the fixed region between first and second bonding pad parts, and length in the longitudinal direction of the emitter contact pattern of the electrode finger 6 is set shorter than that of an emitter contact pattern 8a of another electrode finger. At this time, when the length of the emitter contact pattern 8a is the same as that of another emitter contact pattern, connection is made to the electrode finger 6, namely, the bonding pad for current detection, thus obtaining a desired detection voltage without deteriorating the characteristics of a transistor by changing the structure of the electrode finger 6 only.