METHOD AND DEVICE FOR WET ETCHING

PROBLEM TO BE SOLVED: To improve yield of a semiconductor device by suppressing minute foreign materials from sticking to a semiconductor wafer surface, in a wet etching process for a semiconductor wafer. SOLUTION: Related to a series of wet etching processes wherein a plurality of semiconductor waf...

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Bibliographische Detailangaben
Hauptverfasser: UENO KUNIKA, NAKAOKA YASUYUKI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To improve yield of a semiconductor device by suppressing minute foreign materials from sticking to a semiconductor wafer surface, in a wet etching process for a semiconductor wafer. SOLUTION: Related to a series of wet etching processes wherein a plurality of semiconductor wafers 2 are submerged in a chemical liquid bath 1 at the same time and are submerged in a washing bath for washing, a partition 3 which separates the plurality of semiconductor wafers 2 is provided at least at a gas-liquid interface part when the semiconductor wafer 2 is taken out of the chemical liquid bath 1 as well as at delivery of it to the washing bath 1.