REMOVAL PROCESS OF PHOTORESIST MATERIAL, AND MANUFACTURE OF CMOS PHOTOSENSOR USING THE REMOVAL PROCESS

PROBLEM TO BE SOLVED: To provide a process of removing a photoresist material without leaving residues on a board in a manufacture process and moreover without causing damages to it. SOLUTION: This device is provided with a cover layer 50 to be etched off later, on a substrate in a manufacture proce...

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Bibliographische Detailangaben
Hauptverfasser:	RI SEITETSU, TEI RYUICHI, RIN IKYO, HAKU GENKICHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a process of removing a photoresist material without leaving residues on a board in a manufacture process and moreover without causing damages to it. SOLUTION: This device is provided with a cover layer 50 to be etched off later, on a substrate in a manufacture process, and also a layer of photoresist material is made on the cover layer 50. The photoresist material is patterned, exposed, and developed. The developed photoresist layer is further exposed without using masks. Using the patterned photoresist layer as a mask, the cover layer 50 is etched off. After etching, the photoresist material is removed by a solvent.