SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND MANUFACTURE OF IT
PROBLEM TO BE SOLVED: To reduce deflection amount of a package by connecting a thin-type silicon chip electrically to a wiring layer of an insulating base material, and forming a resin sealing layer of a low thermal expansion coefficient for protecting the thin-type silicon chip. SOLUTION: A Cu wiri...
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Sprache: | eng |
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Zusammenfassung: | PROBLEM TO BE SOLVED: To reduce deflection amount of a package by connecting a thin-type silicon chip electrically to a wiring layer of an insulating base material, and forming a resin sealing layer of a low thermal expansion coefficient for protecting the thin-type silicon chip. SOLUTION: A Cu wiring layer resin 12 is formed on one surface of an insulating resin film 11 comprising a device hole 11a at its central part by a copper-foil photo-etching, etc. The end part of the Cu wiring layer 12 protrudes into the device hole 11a, constituting an inner lead group 12a. A silicon chip 13 which is thinner than the insulating resin film 11 is mounted on the wiring film, and a sealing resin layer 14 comprising a rubber-like resin of low thermal expansion coefficient is formed on an electrode terminal formation surface of the silicon chip 13 and outside the junction part between the electrode terminal and the inner lead 12a. Thus, cracking of a chip or defective mounting caused by deflection of a package is avoided. |
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