VAPOR GROWTH DEVICE AND METHOD

PROBLEM TO BE SOLVED: To enable the inner temperature of a reaction tube and the substrate temperature to be stably controlled without being affected by the thickness of a product film deposited on the inner wall of the reaction tube by a method wherein a film of material different from that of the reaction tube is previously deposited on the inner wall of the reaction tube. SOLUTION: A film of material different from that of a reaction tube 1 is previously deposited as thick as prescribed on the inner wall of the reaction tube. The inner wall of the reaction tube 1 may be formed of various kinds of films such as polysilicon film, Si3N4 film, silicon-germanium mixed crystal film and polysilicon-germanium. When the film is deposited thicker than a prescribed value, the amount of radiation heat emitted from a heating means 2 reaching a board becomes independently of the thickness of a deposited film. Therefore, a temperature can be precisely and stably controlled.