HIGH PURITY TANTALUM FOR THIN FILM FORMATION AND ITS PRODUCTION
PROBLEM TO BE SOLVED: To suppress an abnormal discharging phenomenon and the generation of particles at the time of sputtering by sputtering tantalum in which each content of Nb, W, Mo, transition metal elements, high m.p. metal elements, heavy metal elements other than those, radioactive elements s...
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| creator | SHINDO YUICHIRO YAMAGUCHI SHUNICHIRO |
| description | PROBLEM TO BE SOLVED: To suppress an abnormal discharging phenomenon and the generation of particles at the time of sputtering by sputtering tantalum in which each content of Nb, W, Mo, transition metal elements, high m.p. metal elements, heavy metal elements other than those, radioactive elements such as U and alkali metal elements is controlled to a ratio equal to or below the specified one. SOLUTION: This high purity tantalum for thin film formation contains, by weight, |
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SOLUTION: This high purity tantalum for thin film formation contains, by weight, <=10 ppm Nb, W and Mo, <=1 ppm transition metal elements, high m.p. metal elements and heavy metal elements other than those, <=1 ppb radioactive elements such as U and Th and <=1 ppm alkali metal elements such as Na and K. Each content of oxygen and carbon is desirably controlled to <=100 ppm. Ta2O5 is added to an electrolytic bath of fluoride-chloride or the like, and tantalum scrap having >=10% tantalum content is subjected to electrolytic refining at 600 to 1000 deg.C. High purity tantalum powder electrodeposited on a cathode is press-formed and is thereafter uniformly melted by an electron beam or the like to form into an ingot, which is cut into a target shape to obtain a sputtering target.</description><edition>7</edition><language>eng</language><subject>ALLOYS ; APPARATUS THEREFOR ; CHEMISTRY ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; FERROUS OR NON-FERROUS ALLOYS ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY ORREFINING OF METALS ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000802&DB=EPODOC&CC=JP&NR=2000212678A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000802&DB=EPODOC&CC=JP&NR=2000212678A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHINDO YUICHIRO</creatorcontrib><creatorcontrib>YAMAGUCHI SHUNICHIRO</creatorcontrib><title>HIGH PURITY TANTALUM FOR THIN FILM FORMATION AND ITS PRODUCTION</title><description>PROBLEM TO BE SOLVED: To suppress an abnormal discharging phenomenon and the generation of particles at the time of sputtering by sputtering tantalum in which each content of Nb, W, Mo, transition metal elements, high m.p. metal elements, heavy metal elements other than those, radioactive elements such as U and alkali metal elements is controlled to a ratio equal to or below the specified one. SOLUTION: This high purity tantalum for thin film formation contains, by weight, <=10 ppm Nb, W and Mo, <=1 ppm transition metal elements, high m.p. metal elements and heavy metal elements other than those, <=1 ppb radioactive elements such as U and Th and <=1 ppm alkali metal elements such as Na and K. Each content of oxygen and carbon is desirably controlled to <=100 ppm. Ta2O5 is added to an electrolytic bath of fluoride-chloride or the like, and tantalum scrap having >=10% tantalum content is subjected to electrolytic refining at 600 to 1000 deg.C. High purity tantalum powder electrodeposited on a cathode is press-formed and is thereafter uniformly melted by an electron beam or the like to form into an ingot, which is cut into a target shape to obtain a sputtering target.</description><subject>ALLOYS</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY ORREFINING OF METALS</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD38HT3UAgIDfIMiVQIcfQLcfQJ9VVw8w9SCPHw9FNw8_QB83wdQzz9_RQc_VwUPEOCFQKC_F1CnUFCPAysaYk5xam8UJqbQcnNNcTZQze1ID8-tbggMTk1L7Uk3ivAyMDAwMjQyMzcwtGYKEUA3LAq4A</recordid><startdate>20000802</startdate><enddate>20000802</enddate><creator>SHINDO YUICHIRO</creator><creator>YAMAGUCHI SHUNICHIRO</creator><scope>EVB</scope></search><sort><creationdate>20000802</creationdate><title>HIGH PURITY TANTALUM FOR THIN FILM FORMATION AND ITS PRODUCTION</title><author>SHINDO YUICHIRO ; YAMAGUCHI SHUNICHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2000212678A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>ALLOYS</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY ORREFINING OF METALS</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>SHINDO YUICHIRO</creatorcontrib><creatorcontrib>YAMAGUCHI SHUNICHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHINDO YUICHIRO</au><au>YAMAGUCHI SHUNICHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH PURITY TANTALUM FOR THIN FILM FORMATION AND ITS PRODUCTION</title><date>2000-08-02</date><risdate>2000</risdate><abstract>PROBLEM TO BE SOLVED: To suppress an abnormal discharging phenomenon and the generation of particles at the time of sputtering by sputtering tantalum in which each content of Nb, W, Mo, transition metal elements, high m.p. metal elements, heavy metal elements other than those, radioactive elements such as U and alkali metal elements is controlled to a ratio equal to or below the specified one. SOLUTION: This high purity tantalum for thin film formation contains, by weight, <=10 ppm Nb, W and Mo, <=1 ppm transition metal elements, high m.p. metal elements and heavy metal elements other than those, <=1 ppb radioactive elements such as U and Th and <=1 ppm alkali metal elements such as Na and K. Each content of oxygen and carbon is desirably controlled to <=100 ppm. Ta2O5 is added to an electrolytic bath of fluoride-chloride or the like, and tantalum scrap having >=10% tantalum content is subjected to electrolytic refining at 600 to 1000 deg.C. High purity tantalum powder electrodeposited on a cathode is press-formed and is thereafter uniformly melted by an electron beam or the like to form into an ingot, which is cut into a target shape to obtain a sputtering target.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | ALLOYS APPARATUS THEREFOR CHEMISTRY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FERROUS OR NON-FERROUS ALLOYS METALLURGY PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY ORREFINING OF METALS TREATMENT OF ALLOYS OR NON-FERROUS METALS |
| title | HIGH PURITY TANTALUM FOR THIN FILM FORMATION AND ITS PRODUCTION |
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