HIGH PURITY TANTALUM FOR THIN FILM FORMATION AND ITS PRODUCTION

PROBLEM TO BE SOLVED: To suppress an abnormal discharging phenomenon and the generation of particles at the time of sputtering by sputtering tantalum in which each content of Nb, W, Mo, transition metal elements, high m.p. metal elements, heavy metal elements other than those, radioactive elements s...

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Bibliographische Detailangaben
Hauptverfasser:	SHINDO YUICHIRO, YAMAGUCHI SHUNICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS APPARATUS THEREFOR CHEMISTRY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FERROUS OR NON-FERROUS ALLOYS METALLURGY PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY ORREFINING OF METALS TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To suppress an abnormal discharging phenomenon and the generation of particles at the time of sputtering by sputtering tantalum in which each content of Nb, W, Mo, transition metal elements, high m.p. metal elements, heavy metal elements other than those, radioactive elements such as U and alkali metal elements is controlled to a ratio equal to or below the specified one. SOLUTION: This high purity tantalum for thin film formation contains, by weight,