ANTI-FUSE CIRCUIT FOR POST PACKAGE DRAM REPAIR

PROBLEM TO BE SOLVED: To repair package failures of multiple kinds for improved yield of high-density DRAM by allowing a programmable anti-fuse circuit to include a program address generating circuit, internal power-source generating circuit, and multiple anti-fuse unit circuits. SOLUTION: Each anti-fuse unit circuit 30 is connected to a switching transistor G50, which activates a dummy cell G51. A program address generating circuit 10 is activated by the input of a control signal representing a special test mode. When the special test mode is activated by an external control signal, the program address generating circuit 10 utilizes a program address for anti- fuse programming to select one of the anti-fuse unit circuits 30 and supplies an internal control signal to an internal power-source generator 20, and then the voltage signal generated there is applied to the anti-fuse unit circuit 30.