METHOD OF DRY-ETCHING INDIUM TIN OXIDE

METHOD OF DRY-ETCHING INDIUM TIN OXIDE

PROBLEM TO BE SOLVED: To provide a method of dry-etching indium tin oxide at high rates without generating nonvolatile substance when it is dry-etched. SOLUTION: For this dry-etching method, a device which is provided with high-frequency parallel-plate capacitively coupled discharge electrodes, an e...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YANAGAWA NORIYUKI, SADAMOTO MITSURU, IWAMORI AKIRA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of dry-etching indium tin oxide at high rates without generating nonvolatile substance when it is dry-etched. SOLUTION: For this dry-etching method, a device which is provided with high-frequency parallel-plate capacitively coupled discharge electrodes, an electrode for applying voltage having a substrate with indium tin oxide thereon, and is capable of supplying gas containing hydrogen iodide supplies a gas having a molecular structure including nitrogen, a gas having a molecular structure including chlorine, and a hydrogen iodide gas ranging from 0.1 to 25 Pa to dry-etch the indium tin oxide.